A. Stein, A. Behres, K. Heime, A. Wilk, P. Christol, A. Joullie, M. Brozicek, E. Hulicius, T. Šimeček, S. Rushworth, L. Smith, M. Ravetz
{"title":"InAs(P,Sb)/InAsSb led在室温下在3-4 /spl mu/m范围内发光","authors":"A. Stein, A. Behres, K. Heime, A. Wilk, P. Christol, A. Joullie, M. Brozicek, E. Hulicius, T. Šimeček, S. Rushworth, L. Smith, M. Ravetz","doi":"10.1109/ICIPRM.1999.773643","DOIUrl":null,"url":null,"abstract":"We report the emission characteristics of MOVPE-grown InAs(P,Sb)/InAsSb multiquantum-well (MQW) LEDs operating in the mid-infrared spectral range (3-4 /spl mu/m). InAsP-InAsSb MQW structures exhibit at room temperature strong electroluminescence at 4.2 /spl mu/m, allowing the detection of CO/sub 2/. InAsPSb-InAsSb MQW structures show intense narrow (FWHM=75 nm) spontaneous emission around 3.3 /spl mu/m up to 270 K. The difference in photoluminescence (PL) energies for InAs(P)/InAsSb and InAsPSb-InAsSb MQW structures is explained supposing that the InAsPSb/InAsSb system has type-I band alignment whereas the InAs/InAsSb and InAsP/InAsSb quantum-wells are type-II, which can be confirmed by our calculations.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InAs(P,Sb)/InAsSb LEDs emitting in the 3-4 /spl mu/m range at room temperature\",\"authors\":\"A. Stein, A. Behres, K. Heime, A. Wilk, P. Christol, A. Joullie, M. Brozicek, E. Hulicius, T. Šimeček, S. Rushworth, L. Smith, M. Ravetz\",\"doi\":\"10.1109/ICIPRM.1999.773643\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the emission characteristics of MOVPE-grown InAs(P,Sb)/InAsSb multiquantum-well (MQW) LEDs operating in the mid-infrared spectral range (3-4 /spl mu/m). InAsP-InAsSb MQW structures exhibit at room temperature strong electroluminescence at 4.2 /spl mu/m, allowing the detection of CO/sub 2/. InAsPSb-InAsSb MQW structures show intense narrow (FWHM=75 nm) spontaneous emission around 3.3 /spl mu/m up to 270 K. The difference in photoluminescence (PL) energies for InAs(P)/InAsSb and InAsPSb-InAsSb MQW structures is explained supposing that the InAsPSb/InAsSb system has type-I band alignment whereas the InAs/InAsSb and InAsP/InAsSb quantum-wells are type-II, which can be confirmed by our calculations.\",\"PeriodicalId\":213868,\"journal\":{\"name\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"volume\":\"68 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1999.773643\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773643","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InAs(P,Sb)/InAsSb LEDs emitting in the 3-4 /spl mu/m range at room temperature
We report the emission characteristics of MOVPE-grown InAs(P,Sb)/InAsSb multiquantum-well (MQW) LEDs operating in the mid-infrared spectral range (3-4 /spl mu/m). InAsP-InAsSb MQW structures exhibit at room temperature strong electroluminescence at 4.2 /spl mu/m, allowing the detection of CO/sub 2/. InAsPSb-InAsSb MQW structures show intense narrow (FWHM=75 nm) spontaneous emission around 3.3 /spl mu/m up to 270 K. The difference in photoluminescence (PL) energies for InAs(P)/InAsSb and InAsPSb-InAsSb MQW structures is explained supposing that the InAsPSb/InAsSb system has type-I band alignment whereas the InAs/InAsSb and InAsP/InAsSb quantum-wells are type-II, which can be confirmed by our calculations.
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