集成在0.35μm CMOS中的PIN光电二极管和单光子雪崩二极管的单事件瞬态

2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI:10.1109/RADECS45761.2018.9328700

M. Hofbauer, B. Steindl, K. Schneider-Hornstein, B. Goll, K. Voss, H. Zimmermann

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引用次数: 0

摘要

用相同的0.35μm CMOS工艺制备了PIN光电二极管和单光子雪崩二极管(SPAD)，比较了它们在重离子辐照下的单事件瞬态。实验结果表明，低掺杂外延层主要决定了电荷的收集量。在光电探测器的输出处有高电流峰值，在猝灭器和读出电路设计中需要注意。

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Single-Event Transients in a PIN Photodiode and a Single-Photon Avalanche Diode Integrated in 0.35μm CMOS

Single-event transients (SETs) in a PIN photodiode and a single-photon avalanche diode (SPAD), both fabricated in the same 0.35μm CMOS process, are compared under heavy ion irradiation. The experimental results suggest that mainly the low-doped epitaxial layer defines the amount of collected charge. High current peaks at the output of the photodetectors, necessitate precautions in the quencher and read-out circuit design.

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2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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