130nm ASIC库技术的辐射硬度表征

2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI:10.1109/REDW.2010.5619510

Radu Dumitru, C. Hafer, Tzu-Wen Wu, R. Rominger, H. Gardner, P. Milliken, Kevin Bruno, T. Farris

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引用次数: 4

摘要

在采用130nm商用晶圆厂工艺设计的RadHard-by-Design ASIC库上进行了辐射硬度表征。给出了测试芯片的结果，说明了ASIC库的性能和辐射硬度响应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Radiation Hardness Characterization of a 130nm ASIC Library Technology

Radiation hardness characterization has been performed on a RadHard-by-Design ASIC Library designed using a 130nm commercial fab process. Test chip results are presented illustrating the ASIC library performance and radiation hardness response.

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2010 IEEE Radiation Effects Data Workshop

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