{"title":"10gb /s硅光子学环形调制器特性研究","authors":"C. Finardi, S. Tenenbaum, R. Panepucci","doi":"10.1109/SBMicro.2019.8919439","DOIUrl":null,"url":null,"abstract":"This paper presents the characterization of an electro-optical modulator integrated to an optical transmitter based on silicon photonics technology for high rates. The modulator is implemented through a micro-ring structure, due to its compactness and low modulating voltage. The device was characterized in electro-optical (EO) band and its performance analyzed in data transmission up to 10 Gb/s at $\\lambda =1544 nm$.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization of Silicon Photonics Ring Modulator for 10 Gb/s\",\"authors\":\"C. Finardi, S. Tenenbaum, R. Panepucci\",\"doi\":\"10.1109/SBMicro.2019.8919439\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the characterization of an electro-optical modulator integrated to an optical transmitter based on silicon photonics technology for high rates. The modulator is implemented through a micro-ring structure, due to its compactness and low modulating voltage. The device was characterized in electro-optical (EO) band and its performance analyzed in data transmission up to 10 Gb/s at $\\\\lambda =1544 nm$.\",\"PeriodicalId\":403446,\"journal\":{\"name\":\"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMicro.2019.8919439\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMicro.2019.8919439","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of Silicon Photonics Ring Modulator for 10 Gb/s
This paper presents the characterization of an electro-optical modulator integrated to an optical transmitter based on silicon photonics technology for high rates. The modulator is implemented through a micro-ring structure, due to its compactness and low modulating voltage. The device was characterized in electro-optical (EO) band and its performance analyzed in data transmission up to 10 Gb/s at $\lambda =1544 nm$.