高抑制32nm节点Cu/Low-K互连的极薄腺嘌呤层性质

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159269

M. Hara, H. Aoki, T. Masuzumi, D. Watanabe, C. Kimura, T. Sugino

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引用次数: 0

摘要

下一代器件的Cu/Low-K互连需要极薄层的有效抑制。我们利用腺嘌呤作为一种环保材料，实现了对铜氧化的有效抑制。通过电化学测量，我们发现与传统的Cu抑制剂苯并三唑(BTA)相比，腺嘌呤层可以通过形成非常薄的层来抑制Cu氧化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Properties of very thin adenine layer with high inhibition for 32nm node Cu/Low-K interconnection

An effective inhibition with very thin layer is required for Cu/Low-K interconnection of next generation devices. We have achieved an effective suppression of Cu oxidation using adenine as an environmentally friendly material. By using electrochemical measurements, we find that the adenine layer can inhibit Cu oxidation by forming the very thin layer compared with Benzotriazol (BTA) as a conventional Cu inhibitor.

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2009 International Symposium on VLSI Technology, Systems, and Applications

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