双量子阱中的激子——超越单子带极限

I. Galbraith, G. Duggan
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摘要

量子阱系统中激子结合能的计算在单子带极限下进行,其中只有最低的电子和空穴状态对激子有贡献,这已经被广泛报道。(1,2)当阱中受约束的电子和空穴能级与激子结合能相比在能量上有很大的分离时,这个极限是有效的。另一种极端的情况是,在超晶格中,电子和空穴子带的带宽远远大于激子的结合能,激子将由许多子带状态的线性组合而成。即双量子阱系统,由两个宽度为Lw的相同阱组成,由宽度为Lb的势垒隔开。当Lb较大时,两个最低躺态(即第一对称和反对称电子态和空穴态)几乎简并。随着障壁厚度的减小,这种近简并逐渐解除。这意味着对于厚势垒,为了正确计算激子结合能,必须考虑到两态对之间的库仑势引起的混合。
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Excitons in Double Quantum Wells-beyond the single-subband limit
Calculations of the exciton binding energy in quantum well systems carried out in the single sub-band limit where only the lowest electron and hole states contribute to the exciton have been widely reported.(1,2) This limit is valid when the confined electron and hole energy levels in the well are widely separated in energy compared to the exciton binding energy. At the other extreme would be the case of a superlattice in which the electron and hole subband bandwidths are much larger than the exciton binding energy and the exciton would be made from a linear combination of a number of subband states.(3) In this paper we wish to treat an intermediate case, namely a double quantum well system consisting of two identical wells of width Lw separated by a barrier of width Lb. When Lb is large the two lowest lying states ( i.e. the first symmetric and anti-symmetric electron and hole states ) arc almost degenerate. This near-degeneracy is progressively lifted as the barrier thickness, decreases. This means that for thick barriers in order to correctly calculate the exciton binding energy one must account for the mixing caused by the Coulomb potential between the two pairs of states.
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