J. Jeong, Jae-Young Sung, Hee-Hun Yang, H. Lee, Ga-Won Lee
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Reliability Analysis by Charge Migration of 3D SONOS Flash Memory
In this study, the instability caused by charge migration in 3D SONOS flash memory was analyzed using a mesh-shaped pattern. The lateral and vertical charge migration is separated using the test pattern, and the flat band voltage shift caused by the lateral charge migration is analyzed by program (or erase) and retention repetitive test. In addition, the mechanism of charge migration was modeled by extracting the activation energy of charge migration.
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