ITOX处理的SIMOX结构上电子陷阱的光电流测量

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526503

R. Lawrence, D. Ioannou, R.E. Stahibush, H. Hughes

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引用次数: 1

摘要

对内热氧化物(ITOX)、埋氧化物(BOX) SIMOX结构进行了光电流测量。在5eV汞光源下注入电子后，发现ITOX结构的单位面积净电子捕获量大于对照SIMOX结构。这种增加归因于ITOX对ITOX/BOX氧化物形成的过程影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Photocurrent measurements of electron traps on ITOX processed SIMOX structures

Photocurrent measurements have been performed on internal thermal oxide (ITOX) buried oxide (BOX) SIMOX structures. After electron injection, from a 5eV mercury light source, the net electron trapping per area for the ITOX structure was found to be larger than that of a control SIMOX structure. This increase has been attributed to the ITOX's process influence on the formation of the ITOX/BOX oxide.

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1995 IEEE International SOI Conference Proceedings

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