L. Obermueller, C. Cazzaniga, S. Kulmiya, C. Frost
{"title":"基于单事件效应的sram快中子监测器","authors":"L. Obermueller, C. Cazzaniga, S. Kulmiya, C. Frost","doi":"10.1109/RADECS45761.2018.9328731","DOIUrl":null,"url":null,"abstract":"A fast neutron monitor based on Single Event Upsets in SRAM devices has been designed and tested for use on atmospheric neutron beamlines. Boards with a total memory capacity of up to 16 Mbit are irradiated, and the total number of bit-flips in the memory caused by fast neutron radiation effects is directly proportional to the neutron beam fluence. This system provides a count rate of 0.242 cps/Mbit. A scan of the beam was possible using this monitor, demonstrating that the beam profile is square and uniform.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Fast Neutron Monitor Based on Single Event Effects in SRAMs Using Commercial off-the-Shelf Components\",\"authors\":\"L. Obermueller, C. Cazzaniga, S. Kulmiya, C. Frost\",\"doi\":\"10.1109/RADECS45761.2018.9328731\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fast neutron monitor based on Single Event Upsets in SRAM devices has been designed and tested for use on atmospheric neutron beamlines. Boards with a total memory capacity of up to 16 Mbit are irradiated, and the total number of bit-flips in the memory caused by fast neutron radiation effects is directly proportional to the neutron beam fluence. This system provides a count rate of 0.242 cps/Mbit. A scan of the beam was possible using this monitor, demonstrating that the beam profile is square and uniform.\",\"PeriodicalId\":248855,\"journal\":{\"name\":\"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS45761.2018.9328731\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS45761.2018.9328731","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Fast Neutron Monitor Based on Single Event Effects in SRAMs Using Commercial off-the-Shelf Components
A fast neutron monitor based on Single Event Upsets in SRAM devices has been designed and tested for use on atmospheric neutron beamlines. Boards with a total memory capacity of up to 16 Mbit are irradiated, and the total number of bit-flips in the memory caused by fast neutron radiation effects is directly proportional to the neutron beam fluence. This system provides a count rate of 0.242 cps/Mbit. A scan of the beam was possible using this monitor, demonstrating that the beam profile is square and uniform.
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