先进纳米MOS晶体管中的载流子输运和应力工程

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159267

K. Uchida, M. Saitoh

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引用次数: 3

摘要

本文综述了先进纳米mosfet的载流子输运机制和应力工程。首先，载流子运输散装(100)和(110)mosfet进行了审查。子带结构工程，以提高流动性和弹道电流也进行了研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Carrier transport and stress engineering in advanced nanoscale MOS transistors

This paper reviews the carrier transport mechanisms and stress engineering in advanced nanoscale MOSFETs. First, carrier transport in bulk (100) and (110) MOSFETs is reviewed. Sub-band structure engineering to enhance mobility as well as ballistic current is also examined.

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2009 International Symposium on VLSI Technology, Systems, and Applications

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