Dong-Won Kim, K. Yeo, S. Suk, Ming Li, Y. Yeoh, D. Sohn, C. Chung
{"title":"自对准栅极全能(GAA)硅纳米线mosfet (SNWFET)的制备及其电学特性","authors":"Dong-Won Kim, K. Yeo, S. Suk, Ming Li, Y. Yeoh, D. Sohn, C. Chung","doi":"10.1109/ICICDT.2010.5510288","DOIUrl":null,"url":null,"abstract":"We have proposed gate-all-around Silicon nanowire MOSFET (SNWFET) on bulk Si as an ultimate transistor. Well controlled processes are used to achieve gate length (LG) of sub-10nm and narrow nanowire widths. Excellent performance with reasonable VTH and short channel immunity are achieved owing to thin nanowire channel, self-aligned gate, and GAA structure. Transistor performance with gate length of 10nm has been demonstrated and nanowire size (DNW) dependency of various electrical characteristics has been investigated. Random telegraph noise (RTN) in SNWFET is studied as well.","PeriodicalId":187361,"journal":{"name":"2010 IEEE International Conference on Integrated Circuit Design and Technology","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Fabrication and electrical characteristics of self-aligned (SA) gate-all-around (GAA) si nanowire MOSFETs (SNWFET)\",\"authors\":\"Dong-Won Kim, K. Yeo, S. Suk, Ming Li, Y. Yeoh, D. Sohn, C. Chung\",\"doi\":\"10.1109/ICICDT.2010.5510288\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have proposed gate-all-around Silicon nanowire MOSFET (SNWFET) on bulk Si as an ultimate transistor. Well controlled processes are used to achieve gate length (LG) of sub-10nm and narrow nanowire widths. Excellent performance with reasonable VTH and short channel immunity are achieved owing to thin nanowire channel, self-aligned gate, and GAA structure. Transistor performance with gate length of 10nm has been demonstrated and nanowire size (DNW) dependency of various electrical characteristics has been investigated. Random telegraph noise (RTN) in SNWFET is studied as well.\",\"PeriodicalId\":187361,\"journal\":{\"name\":\"2010 IEEE International Conference on Integrated Circuit Design and Technology\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Conference on Integrated Circuit Design and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2010.5510288\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Conference on Integrated Circuit Design and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2010.5510288","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication and electrical characteristics of self-aligned (SA) gate-all-around (GAA) si nanowire MOSFETs (SNWFET)
We have proposed gate-all-around Silicon nanowire MOSFET (SNWFET) on bulk Si as an ultimate transistor. Well controlled processes are used to achieve gate length (LG) of sub-10nm and narrow nanowire widths. Excellent performance with reasonable VTH and short channel immunity are achieved owing to thin nanowire channel, self-aligned gate, and GAA structure. Transistor performance with gate length of 10nm has been demonstrated and nanowire size (DNW) dependency of various electrical characteristics has been investigated. Random telegraph noise (RTN) in SNWFET is studied as well.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
