溅射mn5ge3c0.8触点的Si上n-Ge自旋积累

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874647

I. Fischer, Li-Te Chang, C. Surgers, S. Chiussi, Kang L. Wang, J. Schulze

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摘要

我们证明了自旋极化电子从溅射的Mn5Ge3C0.8触点注入到Si上简并掺杂的n-Ge层中，这是将自旋注入到Ge通道中集成到cmos兼容制造工艺中的重要一步。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Spin accumulation in n-Ge on Si with sputtered Mn5Ge3C0.8-contacts

We demonstrate electrical injection of spin-polarized electrons from sputtered Mn₅Ge₃C_0.8 contacts into degenerately doped n-Ge layers on Si as an important step towards integrating spin injection into Ge channels into a CMOS-compatible fabrication process.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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