从芯片和晶圆级参数变化确定时钟偏差

S. Sauter, D. Cousinard, R. Thewes, D. Schmitt-Landsiedel, W. Weber
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引用次数: 6

摘要

时钟偏差是通过测量器件和金属线参数作为芯片和晶圆上位置的函数来确定的。实验结果分为基本随机波动部分和处理芯片和晶圆级的相关贡献。根据实测数据对不同的时钟树电路进行了仿真,并以时延、功耗、布局面积和温度为参数进行了表征。模拟结果显示,对于0.25 /spl mu/m流程和金属-3 h时钟树,最坏情况下的偏差为42 ps。
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Clock skew determination from parameter variations at chip and wafer level
Clock skews are determined by measuring device and metal line parameters as a function of position over chip and wafer. Experimental results are separated into a basic random fluctuation part and processing related contributions at chip and wafer level. Different clock tree circuits are simulated based on the measured data, and characterized with the delay, power consumption, layout area and temperature as parameters. Simulations yield a worst case skew of 42 ps for a 0.25 /spl mu/m process and a metal-3 H-clock tree.
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