{"title":"片上去耦电容设计降低CMOS/SOI VLSI中开关噪声引起的不稳定性","authors":"L. K. Wang, Howard H. Chen","doi":"10.1109/SOI.1995.526480","DOIUrl":null,"url":null,"abstract":"The supply noise from the packaging of CMOS/SOI circuits can cause performance degradation, reliability reduction and even loss of circuit functionality due to the device latch-up problem. By properly adding on-chip decoupling capacitors in the proximity of the circuitry, we can effectively alleviate the switching noise problem and improve the performance of CMOS/SOI circuits.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"On-chip decoupling capacitor design to reduce switching-noise-induced instability in CMOS/SOI VLSI\",\"authors\":\"L. K. Wang, Howard H. Chen\",\"doi\":\"10.1109/SOI.1995.526480\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The supply noise from the packaging of CMOS/SOI circuits can cause performance degradation, reliability reduction and even loss of circuit functionality due to the device latch-up problem. By properly adding on-chip decoupling capacitors in the proximity of the circuitry, we can effectively alleviate the switching noise problem and improve the performance of CMOS/SOI circuits.\",\"PeriodicalId\":149490,\"journal\":{\"name\":\"1995 IEEE International SOI Conference Proceedings\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1995.526480\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526480","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On-chip decoupling capacitor design to reduce switching-noise-induced instability in CMOS/SOI VLSI
The supply noise from the packaging of CMOS/SOI circuits can cause performance degradation, reliability reduction and even loss of circuit functionality due to the device latch-up problem. By properly adding on-chip decoupling capacitors in the proximity of the circuitry, we can effectively alleviate the switching noise problem and improve the performance of CMOS/SOI circuits.