埋置PN结对射频下电感器性能的影响

T. Fache, M. Moulin, I. Charlet, Z. Chalupa, J. Raskin, F. Allibert, C. Plantier, F. Gaillard, L. Hutin
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引用次数: 0

摘要

本文展示了埋设PN结对电感性能的影响,并研究了后续衬底损耗的限制。我们提供了一个简单而稳健的模型,可以精确评估在各种衬底上制造的器件的衬底损耗,并使用各种PN结植入条件。我们指出,埋入式PN结对抑制寄生表面传导非常有效,在最佳实验条件下,电感的质量因数提高了30%以上。然而,这种集成不能达到在相同条件下测量的富含陷阱的衬底的相同性能水平。
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Buried PN Junctions Impact on the Performances of an Inductor at RF Frequencies
This paper shows the effect of buried PN junctions on the performances of inductors, and investigates the limitation of the subsequent substrate losses. We provide a simple and robust model that enables a precise evaluation of the substrate losses for devices fabricated on various substrates, and using various PN junctions implantation conditions. We point out that buried PN junctions are very efficient to counter the parasitic surface conduction, increasing the quality factor of inductors by more than 30% in the best experimental conditions. However, this integration does not reach the same performance level as trap rich substrates measured in the same conditions.
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