双栅FinFET:器件及其对IC设计自动化的影响

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-05-17 DOI:10.1109/ICICDT.2004.1309928

I. Aller, J. Clabes

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摘要

本文首先对双栅结构进行了概述。简要介绍了FinFET技术。然后描述了这种完全耗尽的MOSFET器件的独特特性如何影响集成电路设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The double-gate FinFET: device and impact on IC design automation

This paper first gives an overview of double-gate structures in general. briefly covers the FinFET technology.. and then describes how the unique characteristics of this fully depleted MOSFET device impact integrated circuit design.

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2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

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