利用分子束外延在硅基衬底上生长砷化铟

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874657

K. Tan, W. Loke, S. Wicaksono, S. Yoon, S. Subramanian, Qian Zhou, Y. Yeo

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摘要

低缺陷的InAs层首次在GeOI衬底上成功生长。生长的外延结构允许硅、锗和InAs材料在一片晶片上共存。TEM和AFM结果表明，纳米tio2表面光滑，缺陷密度低。

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Growth of indium arsenide on silicon-based substrates using molecular beam epitaxy

Low defect InAs layers have been successfully grown on a GeOI substrate for the first time. The epitaxial structure grown allows the co-existence Si, Ge and InAs material on a single wafer. TEM and AFM results showed a low defect density and smooth InAs surface, respectively.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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