{"title":"非均匀衬底掺杂的阈值电压建模[MOSFET]","authors":"K. Lim, X. Zhou","doi":"10.1109/SMELEC.1998.781144","DOIUrl":null,"url":null,"abstract":"A simple analytical threshold voltage equation for modelling nonuniform MOSFET channel doping is derived, which takes the peak doping concentration and peak location as inputs with a single process-dependent fitting parameter. The model has been verified with extensive numerical simulation results and can be applied to real devices for a wide range of nonuniform doping profiles with a simple, empirical parameter extraction.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Modelling of threshold voltage with non-uniform substrate doping [MOSFET]\",\"authors\":\"K. Lim, X. Zhou\",\"doi\":\"10.1109/SMELEC.1998.781144\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple analytical threshold voltage equation for modelling nonuniform MOSFET channel doping is derived, which takes the peak doping concentration and peak location as inputs with a single process-dependent fitting parameter. The model has been verified with extensive numerical simulation results and can be applied to real devices for a wide range of nonuniform doping profiles with a simple, empirical parameter extraction.\",\"PeriodicalId\":356206,\"journal\":{\"name\":\"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-11-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.1998.781144\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.1998.781144","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modelling of threshold voltage with non-uniform substrate doping [MOSFET]
A simple analytical threshold voltage equation for modelling nonuniform MOSFET channel doping is derived, which takes the peak doping concentration and peak location as inputs with a single process-dependent fitting parameter. The model has been verified with extensive numerical simulation results and can be applied to real devices for a wide range of nonuniform doping profiles with a simple, empirical parameter extraction.
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