S. Tyaginov, M. Jech, P. Sharma, J. Franco, B. Kaczer, T. Grasser
{"title":"热载流子降解的温度行为研究","authors":"S. Tyaginov, M. Jech, P. Sharma, J. Franco, B. Kaczer, T. Grasser","doi":"10.1109/IIRW.2015.7437088","DOIUrl":null,"url":null,"abstract":"We show that - in contrast to previous findings - hot-carrier degradation (HCD) in scaled nMOSFETs with a channel length of 44 nm appears to be weaker at elevated temperatures. However, the distance between degradation traces obtained at 25 and 75° C reduces as the stress voltages increase and at a certain voltage the changes of the linear drain current measured at 25 and 75° C are almost identical in the entire stress time window. We apply our physics-based model for hot-carrier degradation to analyze the temperature behavior of this detrimental phenomenon. This behavior is interpreted in terms of competing single- and multiple-carrier processes of Si-H bond dissociation with the corresponding rates having the opposite temperature dependencies. One of the most important aspects relevant to the temperature behavior of HCD is the bond vibrational life-time which decreases with the temperature.","PeriodicalId":120239,"journal":{"name":"2015 IEEE International Integrated Reliability Workshop (IIRW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"On the temperature behavior of hot-carrier degradation\",\"authors\":\"S. Tyaginov, M. Jech, P. Sharma, J. Franco, B. Kaczer, T. Grasser\",\"doi\":\"10.1109/IIRW.2015.7437088\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We show that - in contrast to previous findings - hot-carrier degradation (HCD) in scaled nMOSFETs with a channel length of 44 nm appears to be weaker at elevated temperatures. However, the distance between degradation traces obtained at 25 and 75° C reduces as the stress voltages increase and at a certain voltage the changes of the linear drain current measured at 25 and 75° C are almost identical in the entire stress time window. We apply our physics-based model for hot-carrier degradation to analyze the temperature behavior of this detrimental phenomenon. This behavior is interpreted in terms of competing single- and multiple-carrier processes of Si-H bond dissociation with the corresponding rates having the opposite temperature dependencies. One of the most important aspects relevant to the temperature behavior of HCD is the bond vibrational life-time which decreases with the temperature.\",\"PeriodicalId\":120239,\"journal\":{\"name\":\"2015 IEEE International Integrated Reliability Workshop (IIRW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Integrated Reliability Workshop (IIRW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2015.7437088\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2015.7437088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the temperature behavior of hot-carrier degradation
We show that - in contrast to previous findings - hot-carrier degradation (HCD) in scaled nMOSFETs with a channel length of 44 nm appears to be weaker at elevated temperatures. However, the distance between degradation traces obtained at 25 and 75° C reduces as the stress voltages increase and at a certain voltage the changes of the linear drain current measured at 25 and 75° C are almost identical in the entire stress time window. We apply our physics-based model for hot-carrier degradation to analyze the temperature behavior of this detrimental phenomenon. This behavior is interpreted in terms of competing single- and multiple-carrier processes of Si-H bond dissociation with the corresponding rates having the opposite temperature dependencies. One of the most important aspects relevant to the temperature behavior of HCD is the bond vibrational life-time which decreases with the temperature.