总电离剂量对130 nm 4mb SRAM存储器中子SEU截面的影响

2014 15th Latin American Test Workshop - LATW Pub Date : 2014-03-12 DOI:10.1109/LATW.2014.6841919

E. C. F. Pereira, O. Gonçalez, R. G. Vaz, C. Federico, T. H. Both, G. Wirth

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引用次数: 10

摘要

利用放射性241Am-Be中子源的准各向同性快中子流畅度，测量了130 nm 4mb SRAM存储器的快中子单事件扰动(SEU)截面。在三个伽马射线累积剂量步骤下，对存储芯片进行了截面测量，观察到根据总电离剂量(TID)，中子SEU截面略有增长。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The effects of total ionizing dose on the neutron SEU cross section of a 130 nm 4 Mb SRAM memory

Fast neutron single event upset (SEU) cross section of an 130 nm 4 Mb SRAM memory was measured by exposing the memory chip to a known quasi-isotropic fast neutron fluency from a radioactive 241Am-Be neutron source. The cross section measurements were performed after exposing the memory chip to three gamma-rays accumulated doses steps and it was observed a slight growing of the neutron SEU cross section according the total ionizing dose (TID).

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2014 15th Latin American Test Workshop - LATW

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