{"title":"一种染色化学腐蚀率的研究，并用于检测种植体缺陷","authors":"Miao Wu, Y. Che","doi":"10.1109/IPFA.2014.6898125","DOIUrl":null,"url":null,"abstract":"In this paper, a chemical is used to stain the implant profile. Its etching rate to different dope type and density is studied by performing cross-section on three typical devices and then dipping in the chemical for staining. Due to etching rate difference, the method is shown to be effective in localizing implant profile in the Si active area. Meanwhile real failure analysis cases are presented, and the stain chemical is proved effective in localizing non-uniform implantation.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A stain chemical etching rate study and used to detect implant defect\",\"authors\":\"Miao Wu, Y. Che\",\"doi\":\"10.1109/IPFA.2014.6898125\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a chemical is used to stain the implant profile. Its etching rate to different dope type and density is studied by performing cross-section on three typical devices and then dipping in the chemical for staining. Due to etching rate difference, the method is shown to be effective in localizing implant profile in the Si active area. Meanwhile real failure analysis cases are presented, and the stain chemical is proved effective in localizing non-uniform implantation.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898125\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A stain chemical etching rate study and used to detect implant defect
In this paper, a chemical is used to stain the implant profile. Its etching rate to different dope type and density is studied by performing cross-section on three typical devices and then dipping in the chemical for staining. Due to etching rate difference, the method is shown to be effective in localizing implant profile in the Si active area. Meanwhile real failure analysis cases are presented, and the stain chemical is proved effective in localizing non-uniform implantation.
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