{"title":"节能功率mosfet","authors":"M. Tack","doi":"10.1109/ICICDT.2010.5510264","DOIUrl":null,"url":null,"abstract":"An overview is given of the main technology trends and innovations in Power MOSFET transistors ranging from LV(<50V), MV (50V-200V) to HV (200V-1000V), in view of the needs for high energy efficient power management systems. Alternatives to MOSFET, like IGBT and GaN-HEMT, are briefly highlighted and discussed.","PeriodicalId":187361,"journal":{"name":"2010 IEEE International Conference on Integrated Circuit Design and Technology","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Energy efficient power MOSFETs\",\"authors\":\"M. Tack\",\"doi\":\"10.1109/ICICDT.2010.5510264\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An overview is given of the main technology trends and innovations in Power MOSFET transistors ranging from LV(<50V), MV (50V-200V) to HV (200V-1000V), in view of the needs for high energy efficient power management systems. Alternatives to MOSFET, like IGBT and GaN-HEMT, are briefly highlighted and discussed.\",\"PeriodicalId\":187361,\"journal\":{\"name\":\"2010 IEEE International Conference on Integrated Circuit Design and Technology\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Conference on Integrated Circuit Design and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2010.5510264\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Conference on Integrated Circuit Design and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2010.5510264","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An overview is given of the main technology trends and innovations in Power MOSFET transistors ranging from LV(<50V), MV (50V-200V) to HV (200V-1000V), in view of the needs for high energy efficient power management systems. Alternatives to MOSFET, like IGBT and GaN-HEMT, are briefly highlighted and discussed.
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