R. Fornari, A. Zappettini, E. Gombia, R. Mosca, M. Curti, K. Chearkaoui, G. Manakchi
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Semi-insulating behaviour of n-type lightly Fe-doped InP wafers after thermal annealing
As-grown Fe-doped semiconducting (SC) InP samples (residual carrier concentration /spl les/10/sup 15/ cm/sup -3/, estimated iron concentration 6-8/spl times/10/sup 15/ cm/sup -3/) were seen to convert to semi-insulating (SI), with high resistivity and good mobility, when annealed under appropriate conditions. This fact is very interesting since it gives the opportunity of obtaining semi-insulating InP with low Fe content. In this paper we report the annealing parameters together with the results of an extensive characterization (by Hall effect, C-V, IR absorption and PICTS) of the treated samples. The results suggest that the conductivity drop is related to a considerable loss of shallow donors.
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