一种SOI CMOS制程的高性能横向双极晶体管

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526475

M. Chan, S. Fung, C. Hu, P. Ko

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引用次数: 7

摘要

研究了一种采用SOI CMOS工艺制备的新型双极器件结构。与侧基触点方案相比，新的基触点方案可随通道宽度扩展，从而提供更高的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A high performance lateral bipolar transistor from a SOI CMOS process

A new bipolar device structure fabricated using a SOI CMOS process has been studied. The new base contact scheme is scalable with channel width, thus giving higher performance compared with the side base contact scheme.

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1995 IEEE International SOI Conference Proceedings

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