F. Reier, C. Bornholdt, D. Hoffmann, F. Kappe, L. Morl
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Influence of MOVPE growth conditions and substrate parameters on the structural quality of multi-period InGaAsP/InP MQW structures
In this work we have investigated the MOVPE growth of multi-period InGaAsP/InP quantum confined Stark effect (QCSE) layer structures and provide evidence that the QCSE response can be influenced by optimizing the gas exchange procedure, mainly to minimize carry-over effects. Secondly, we present new results on the thermal stability behaviour of these MQW structures which appear to be strongly related with the underlying buffer layer and substrate material.
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