开关用共振隧道二极管的制造

S. Diamond, E. Özbay, M. Rodwell, D. Bloom, Y. Pao, E. Wolak, J. S. Harris
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引用次数: 1

摘要

对于二进制和多级逻辑电路等数字电路应用,需要器件隔离才能在芯片上集成多个器件。微波电路应用,如混频器和乘频器需要低损耗的非导电衬底,用于高质量传输线和其他无源微波结构的片上集成。我们已经展示了一种制造工艺,该工艺可以生产高质量的RTD,其最大振荡频率超过200 GHz,适用于开关应用,器件集成和微波结构
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Fabrication of Resonant Tunneling Diodes for Switching Applications
For digital circuit applications such as binary and multi-level logic circuits, device isolation is required to integrate several devices on chip. Microwave circuit applications such as mixers, and frequency multipliers require a low loss nonconducting substrate for on-chip integrations of high quality transmission lines and other passive microwave structures. We have demonstrated a fabrication process which produces high quality RTD’s with a maximum frequency of oscillation above 200 GHz in a process suitable for switching applications, integrations of devices and microwave structures
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