65 nm寄生萃取的挑战与影响

K. Chow
{"title":"65 nm寄生萃取的挑战与影响","authors":"K. Chow","doi":"10.1109/ISQED.2006.133","DOIUrl":null,"url":null,"abstract":"Although industry-wide adoption of 65nm technology is in its infancy, major foundries have started developing design kits for the 65nm base. For designers, this means managing new and complex process variability and interconnect issues, relevant to specific design flows, using advanced parasitic extraction methodologies","PeriodicalId":138839,"journal":{"name":"7th International Symposium on Quality Electronic Design (ISQED'06)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The challenges and impact of parasitic extraction at 65 nm\",\"authors\":\"K. Chow\",\"doi\":\"10.1109/ISQED.2006.133\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Although industry-wide adoption of 65nm technology is in its infancy, major foundries have started developing design kits for the 65nm base. For designers, this means managing new and complex process variability and interconnect issues, relevant to specific design flows, using advanced parasitic extraction methodologies\",\"PeriodicalId\":138839,\"journal\":{\"name\":\"7th International Symposium on Quality Electronic Design (ISQED'06)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"7th International Symposium on Quality Electronic Design (ISQED'06)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2006.133\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"7th International Symposium on Quality Electronic Design (ISQED'06)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2006.133","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

虽然65nm技术在整个行业的采用还处于起步阶段,但主要的代工厂已经开始开发65nm基础的设计套件。对于设计师来说,这意味着管理新的和复杂的过程可变性和互连问题,与特定的设计流程相关,使用先进的寄生提取方法
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
The challenges and impact of parasitic extraction at 65 nm
Although industry-wide adoption of 65nm technology is in its infancy, major foundries have started developing design kits for the 65nm base. For designers, this means managing new and complex process variability and interconnect issues, relevant to specific design flows, using advanced parasitic extraction methodologies
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A DFM methodology to evaluate the impact of lithography conditions on the speed of critical paths in a VLSI circuit Power-aware test pattern generation for improved concurrency at the core level Compact reduced order modeling for multiple-port interconnects Method to evaluate cable discharge event (CDE) reliability of integrated circuits in CMOS technology Minimizing ohmic loss in future processor IR events
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1