28nm FPGA可编程延迟电路单抽头延迟故障的电气和物理分析

Chow Yew Meng, Bai Haonan, G. Tan, P. Salinas, Johney Ou Yang
{"title":"28nm FPGA可编程延迟电路单抽头延迟故障的电气和物理分析","authors":"Chow Yew Meng, Bai Haonan, G. Tan, P. Salinas, Johney Ou Yang","doi":"10.1109/IPFA.2014.6898155","DOIUrl":null,"url":null,"abstract":"This failure analysis is based on a 28nm FPGA IDelay logic block which features an all programmable, 32-tap delay line. Each tap delay is carefully calibrated to provide an absolute delay value of 78ps independent of process voltage, and temperature variations. To locate the failing IDelay site, scan chain methodology was utilized. Combinations of delay tests were created to localize the defect within the IDelay block and the failure was isolated to a single tap delay circuit. Photon emission analysis validated the electrical analysis with an emission successfully detected at the suspect area. Physical failure analysis utilizing a combination of AFP current contrast imaging and nano-probing analysis at the contact layer further isolated the area of interest to a specific transistor. Die delayering and SEM high beam inspection did not show any anomalies, but subsequent TEM analysis revealed diffusion bridging at the failure location.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Electrical and physical analysis of a 28nm FPGA programmable delay circuit single tap delay failure\",\"authors\":\"Chow Yew Meng, Bai Haonan, G. Tan, P. Salinas, Johney Ou Yang\",\"doi\":\"10.1109/IPFA.2014.6898155\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This failure analysis is based on a 28nm FPGA IDelay logic block which features an all programmable, 32-tap delay line. Each tap delay is carefully calibrated to provide an absolute delay value of 78ps independent of process voltage, and temperature variations. To locate the failing IDelay site, scan chain methodology was utilized. Combinations of delay tests were created to localize the defect within the IDelay block and the failure was isolated to a single tap delay circuit. Photon emission analysis validated the electrical analysis with an emission successfully detected at the suspect area. Physical failure analysis utilizing a combination of AFP current contrast imaging and nano-probing analysis at the contact layer further isolated the area of interest to a specific transistor. Die delayering and SEM high beam inspection did not show any anomalies, but subsequent TEM analysis revealed diffusion bridging at the failure location.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898155\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898155","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

此故障分析基于28nm FPGA iddelay逻辑块,该逻辑块具有全可编程的32分接延迟线。每个分接延迟都经过仔细校准,以提供78ps的绝对延迟值,与过程电压和温度变化无关。为了定位失败的iddelay站点,使用了扫描链方法。创建了延迟测试组合,以在iddelay块中定位缺陷,并将故障隔离到单抽头延迟电路中。光子发射分析通过在可疑区域成功检测到的发射验证了电分析。物理失效分析利用AFP电流对比成像和纳米探测分析在接触层的组合进一步隔离感兴趣的区域到特定的晶体管。模具脱层和SEM远光灯检查没有发现任何异常,但随后的TEM分析显示在故障位置扩散桥接。
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Electrical and physical analysis of a 28nm FPGA programmable delay circuit single tap delay failure
This failure analysis is based on a 28nm FPGA IDelay logic block which features an all programmable, 32-tap delay line. Each tap delay is carefully calibrated to provide an absolute delay value of 78ps independent of process voltage, and temperature variations. To locate the failing IDelay site, scan chain methodology was utilized. Combinations of delay tests were created to localize the defect within the IDelay block and the failure was isolated to a single tap delay circuit. Photon emission analysis validated the electrical analysis with an emission successfully detected at the suspect area. Physical failure analysis utilizing a combination of AFP current contrast imaging and nano-probing analysis at the contact layer further isolated the area of interest to a specific transistor. Die delayering and SEM high beam inspection did not show any anomalies, but subsequent TEM analysis revealed diffusion bridging at the failure location.
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