Chow Yew Meng, Bai Haonan, G. Tan, P. Salinas, Johney Ou Yang
{"title":"28nm FPGA可编程延迟电路单抽头延迟故障的电气和物理分析","authors":"Chow Yew Meng, Bai Haonan, G. Tan, P. Salinas, Johney Ou Yang","doi":"10.1109/IPFA.2014.6898155","DOIUrl":null,"url":null,"abstract":"This failure analysis is based on a 28nm FPGA IDelay logic block which features an all programmable, 32-tap delay line. Each tap delay is carefully calibrated to provide an absolute delay value of 78ps independent of process voltage, and temperature variations. To locate the failing IDelay site, scan chain methodology was utilized. Combinations of delay tests were created to localize the defect within the IDelay block and the failure was isolated to a single tap delay circuit. Photon emission analysis validated the electrical analysis with an emission successfully detected at the suspect area. Physical failure analysis utilizing a combination of AFP current contrast imaging and nano-probing analysis at the contact layer further isolated the area of interest to a specific transistor. Die delayering and SEM high beam inspection did not show any anomalies, but subsequent TEM analysis revealed diffusion bridging at the failure location.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Electrical and physical analysis of a 28nm FPGA programmable delay circuit single tap delay failure\",\"authors\":\"Chow Yew Meng, Bai Haonan, G. Tan, P. Salinas, Johney Ou Yang\",\"doi\":\"10.1109/IPFA.2014.6898155\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This failure analysis is based on a 28nm FPGA IDelay logic block which features an all programmable, 32-tap delay line. Each tap delay is carefully calibrated to provide an absolute delay value of 78ps independent of process voltage, and temperature variations. To locate the failing IDelay site, scan chain methodology was utilized. Combinations of delay tests were created to localize the defect within the IDelay block and the failure was isolated to a single tap delay circuit. Photon emission analysis validated the electrical analysis with an emission successfully detected at the suspect area. Physical failure analysis utilizing a combination of AFP current contrast imaging and nano-probing analysis at the contact layer further isolated the area of interest to a specific transistor. Die delayering and SEM high beam inspection did not show any anomalies, but subsequent TEM analysis revealed diffusion bridging at the failure location.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898155\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898155","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical and physical analysis of a 28nm FPGA programmable delay circuit single tap delay failure
This failure analysis is based on a 28nm FPGA IDelay logic block which features an all programmable, 32-tap delay line. Each tap delay is carefully calibrated to provide an absolute delay value of 78ps independent of process voltage, and temperature variations. To locate the failing IDelay site, scan chain methodology was utilized. Combinations of delay tests were created to localize the defect within the IDelay block and the failure was isolated to a single tap delay circuit. Photon emission analysis validated the electrical analysis with an emission successfully detected at the suspect area. Physical failure analysis utilizing a combination of AFP current contrast imaging and nano-probing analysis at the contact layer further isolated the area of interest to a specific transistor. Die delayering and SEM high beam inspection did not show any anomalies, but subsequent TEM analysis revealed diffusion bridging at the failure location.