先进体FinFET技术内部锁紧特性研究

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI:10.1109/IPFA47161.2019.8984897

Wei Liang, R. Gauthier, S. Mitra, You Li, Chen Yan

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引用次数: 4

摘要

本文研究了一种先进的块体FinFET技术中的内部锁紧(ILU)行为。介绍了ILU的开发和表征方法，并对薄氧化物(SG)和厚氧化物(EG)受害器件的ILU特性进行了全面的讨论。比较了7nm和14nm体积FinFET技术的ILU特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study of Internal Latchup Behaviors in Advanced Bulk FinFET Technology

In this paper, Internal Latchup (ILU) behaviors are studied in an advanced bulk FinFET technology. The methodology of the ILU development and characterization are introduced and the ILU characteristics of thin oxide (SG) and thick oxide (EG) victim devices are discussed comprehensively. Comparison between 7nm and 14nm Bulk FinFET technology has been made on ILU characteristics.

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2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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