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引用次数: 8

摘要

似乎密度问题将迫使DRAM社区考虑使用完全不同的方案来实现存储器设备。我们建议使用纳米级碳结构作为存储器件的基础。单壁碳纳米管将包含一个带电的巴基球。那个巴基球会紧紧地粘在管子的一端或另一端。我们根据球在管子的哪一边来分配设备的位值。其结果是一个高速的、非易失性的内存位。我们为这些设备的互连提出了一些方案,并检查了一些已知的电气问题。
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The potential of carbon-based memory systems
It seems likely that density concerns will force the DRAM community to consider using radically different schemes for the implementation of memory devices. We propose using nano-scale carbon structures as the basis for a memory device. A single-wall carbon nanotube would contain a charged buckyball. That buckyball will stick tightly to one end of the tube or the other. We assign the bit value of the device depending on which side of the tube the ball is. The result is a high-speed, non-volatile bit of memory. We propose a number of schemes for the interconnection of these devices and examine some of the known electrical issues.
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