{"title":"深亚微米技术中的窄器件问题——应力、TED和偏析对器件性能的影响","authors":"F. Nouri, G. Scott, M. Rubin, M. Manley, P. Stolk","doi":"10.1109/ESSDERC.2000.194727","DOIUrl":null,"url":null,"abstract":"Shallow Trench Isolation (STI) has been the isolation scheme of choice for sub0.25μm technologies. One of the challenges of scaling STI to 0.13μm and beyond is the control of Vt and Idsat of narrow devices. In this paper, we show that Idsat of narrow devices is strongly impacted by the stress due to trench processing. We also show that Vt and leakage of narrow devices (in particular NMOS devices) is impacted by dopant redistribution in the channel caused by TED (Transient Enhanced Diffusion) and boron segregation to the trench sidewalls.","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Narrow Device Issues in Deep-Submicron Technologies-the Influence of Stress, TED and Segregation on Device Performance\",\"authors\":\"F. Nouri, G. Scott, M. Rubin, M. Manley, P. Stolk\",\"doi\":\"10.1109/ESSDERC.2000.194727\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Shallow Trench Isolation (STI) has been the isolation scheme of choice for sub0.25μm technologies. One of the challenges of scaling STI to 0.13μm and beyond is the control of Vt and Idsat of narrow devices. In this paper, we show that Idsat of narrow devices is strongly impacted by the stress due to trench processing. We also show that Vt and leakage of narrow devices (in particular NMOS devices) is impacted by dopant redistribution in the channel caused by TED (Transient Enhanced Diffusion) and boron segregation to the trench sidewalls.\",\"PeriodicalId\":354721,\"journal\":{\"name\":\"30th European Solid-State Device Research Conference\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2000.194727\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194727","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Narrow Device Issues in Deep-Submicron Technologies-the Influence of Stress, TED and Segregation on Device Performance
Shallow Trench Isolation (STI) has been the isolation scheme of choice for sub0.25μm technologies. One of the challenges of scaling STI to 0.13μm and beyond is the control of Vt and Idsat of narrow devices. In this paper, we show that Idsat of narrow devices is strongly impacted by the stress due to trench processing. We also show that Vt and leakage of narrow devices (in particular NMOS devices) is impacted by dopant redistribution in the channel caused by TED (Transient Enhanced Diffusion) and boron segregation to the trench sidewalls.
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