{"title":"一种15ghz带宽的晶格匹配InAlAs/InGaAs/InP hemt OEIC光电接收器","authors":"P. Fay, W. Wohlmuth, C. Caneau, I. Adesida","doi":"10.1109/DRC.1995.496275","DOIUrl":null,"url":null,"abstract":"We report an advance in photoreceiver performance achieved by utilizing very high-performance quarter-micron lattice-matched high-electron mobility transistors (HEMTs) and metal-semiconductor-metal (MSM) photodetectors in the design of a 1.55 /spl mu/m sensitive high-speed, monolithically integrated lightwave receiver.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 15 GHz bandwidth lattice-matched InAlAs/InGaAs/InP HEMT-based OEIC photoreceiver\",\"authors\":\"P. Fay, W. Wohlmuth, C. Caneau, I. Adesida\",\"doi\":\"10.1109/DRC.1995.496275\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report an advance in photoreceiver performance achieved by utilizing very high-performance quarter-micron lattice-matched high-electron mobility transistors (HEMTs) and metal-semiconductor-metal (MSM) photodetectors in the design of a 1.55 /spl mu/m sensitive high-speed, monolithically integrated lightwave receiver.\",\"PeriodicalId\":326645,\"journal\":{\"name\":\"1995 53rd Annual Device Research Conference Digest\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 53rd Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1995.496275\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496275","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 15 GHz bandwidth lattice-matched InAlAs/InGaAs/InP HEMT-based OEIC photoreceiver
We report an advance in photoreceiver performance achieved by utilizing very high-performance quarter-micron lattice-matched high-electron mobility transistors (HEMTs) and metal-semiconductor-metal (MSM) photodetectors in the design of a 1.55 /spl mu/m sensitive high-speed, monolithically integrated lightwave receiver.
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