Ge1−x−ySnxCy三元合金薄膜在Ge(001)衬底上的生长和结晶性能

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874666

K. Terasawa, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, E. Kamiyama, R. Matsutani, R. Suwa, K. Kashima, K. Izunome, K. Sueoka, S. Zaima

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引用次数: 3

摘要

我们实现了世界上第一个Ge1-x-ySnxCy层的外延生长，并研究了Sn掺入对Ge1-xCx生长的影响。Sn的掺入可以降低Ge1-xCx层的外延温度。此外，Sn的掺入可以使C原子在取代位点稳定。该Ge1-x-ySnxCy层有望在晶格参数上独立实现能带工程，并有望扩展iv族半导体材料在纳米电子和光电子应用中的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Growth and crystalline properties of Ge1−x−ySnxCy ternary alloy thin films on Ge(001) substrate

We achieved the world's first epitaxial growth of a Ge_1-x-ySn_xC_y layer, and investigated the effect of Sn incorporation on the growth of Ge_1-xC_x. Sn incorporation can decrease the epitaxial temperature of Ge_1-xC_x layer. Also, Sn incorporation can make C atoms stable at the substitutional site. This Ge_1-x-ySn_xC_y layer is expected to realize the energy band engineering independently on the lattice parameter and promises to extend the potential of group-IV semiconductor materials for nanoelectronics and optoelectronic applications.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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