用AsH3掺杂硅中的砷原子层

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874638

Y. Yamamoto, R. Kurps, Juichi Murota, B. Tillack

{"title":"用AsH3掺杂硅中的砷原子层","authors":"Y. Yamamoto, R. Kurps, Juichi Murota, B. Tillack","doi":"10.1109/ISTDM.2014.6874638","DOIUrl":null,"url":null,"abstract":"Results of arsenic atomic layer doping in Si (100) are presented in this study. Arsenic adsorption and segregation behavior on the Si(100) surface are also discussed. SIMS and four-point probe methods are used for As profile and dosage measurements.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Arsenic atomic layer doping in Si using AsH3\",\"authors\":\"Y. Yamamoto, R. Kurps, Juichi Murota, B. Tillack\",\"doi\":\"10.1109/ISTDM.2014.6874638\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Results of arsenic atomic layer doping in Si (100) are presented in this study. Arsenic adsorption and segregation behavior on the Si(100) surface are also discussed. SIMS and four-point probe methods are used for As profile and dosage measurements.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874638\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874638","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文报道了砷原子层在硅(100)中掺杂的结果。还讨论了砷在Si(100)表面的吸附和偏析行为。SIMS和四点探针法用于砷剖面和剂量测量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Arsenic atomic layer doping in Si using AsH3

Results of arsenic atomic layer doping in Si (100) are presented in this study. Arsenic adsorption and segregation behavior on the Si(100) surface are also discussed. SIMS and four-point probe methods are used for As profile and dosage measurements.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

自引率

0.00%

发文量