累积型与反转型:VLSI平台隔离全耗尽超薄SOI PMOS器件中的窄通道效应

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526449

K. Su, J. Kuo

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引用次数: 3

摘要

本文报道了台地隔离全耗尽超薄SOI反转型和蓄积型PMOS器件中与侧壁相关的窄通道效应。研究发现，与反演型器件相反，由于侧壁通过埋地氧化物影响埋地通道效应，台面隔离超薄SOI蓄积式PMOS器件的阈值电压随着通道宽度的减小而减小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Accumulation-type vs. inversion-type: narrow channel effect in VLSI mesa-isolated fully-depleted ultra-thin SOI PMOS devices

The paper reports the sidewall-related narrow channel effect in mesa-isolated fully-depleted ultra-thin SOI inversion-type and accumulation-type PMOS devices. Based on the study, contrary to inversion-type devices, the threshold voltage of mesa-isolated ultra-thin SOI accumulation-type PMOS devices shrinks as the channel width scales down as a result of the buried-channel effect influenced by the sidewall via the buried oxide.

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1995 IEEE International SOI Conference Proceedings

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