具有亚纳米EOT的高电子迁移率n沟道Ge mosfet

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874697

A. Toriumi, C. Lee, Cimang Lu, T. Nishimura

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引用次数: 1

摘要

n沟道Ge场效应管中电子迁移率差不是固有的。我们可以通过理解栅堆形成的热力学以及表面平面化和氧化的动力学来设计锗界面。因此，Ge fet不仅在p沟道，而且在n沟道fet中都很有前景。

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High electron mobility n-channel Ge MOSFETs with sub-nm EOT

Poor electron mobility in n-channel Ge FETs is not intrinsic. We can engineer the Ge interface through understanding of thermodynamics in gate stack formation and of kinetics of both surface planarization and oxidation. Thus, Ge FETs are quite promising not only in p-channel but also in n-channel FETs.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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