J. Thuret, C. Gonzalez, J. Benchimol, M. Riet, P. Berdaguer
{"title":"毫米波光纤无线电通信用高速InP/InGaAs异质结光电晶体管","authors":"J. Thuret, C. Gonzalez, J. Benchimol, M. Riet, P. Berdaguer","doi":"10.1109/ICIPRM.1999.773715","DOIUrl":null,"url":null,"abstract":"We report on the performance of a graded-base InP/InGaAs heterojunction phototransistor (HPT) as a direct photodetector and an optoelectronic up-converter in 30 GHz band, investigated at a wavelength of 1.55 /spl mu/m. HPT performances were improved according to the optimised base contact design in order to obtain a higher optical gain G/sub opt/ up to the millimetre-wave range. It is also shown, by analysis and measurements, that a complete description of HPTs can be made using a three-port network representation, with the optical window as an input port. This approach has several advantages in particular, the extraction of the 'optical' transducer power gain G/sub OT/ of the HPTs, needed for designing optoelectronic integrated circuits, OEIC.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"High-speed InP/InGaAs heterojunction phototransistor for millimetre-wave fibre radio communications\",\"authors\":\"J. Thuret, C. Gonzalez, J. Benchimol, M. Riet, P. Berdaguer\",\"doi\":\"10.1109/ICIPRM.1999.773715\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the performance of a graded-base InP/InGaAs heterojunction phototransistor (HPT) as a direct photodetector and an optoelectronic up-converter in 30 GHz band, investigated at a wavelength of 1.55 /spl mu/m. HPT performances were improved according to the optimised base contact design in order to obtain a higher optical gain G/sub opt/ up to the millimetre-wave range. It is also shown, by analysis and measurements, that a complete description of HPTs can be made using a three-port network representation, with the optical window as an input port. This approach has several advantages in particular, the extraction of the 'optical' transducer power gain G/sub OT/ of the HPTs, needed for designing optoelectronic integrated circuits, OEIC.\",\"PeriodicalId\":213868,\"journal\":{\"name\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1999.773715\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-speed InP/InGaAs heterojunction phototransistor for millimetre-wave fibre radio communications
We report on the performance of a graded-base InP/InGaAs heterojunction phototransistor (HPT) as a direct photodetector and an optoelectronic up-converter in 30 GHz band, investigated at a wavelength of 1.55 /spl mu/m. HPT performances were improved according to the optimised base contact design in order to obtain a higher optical gain G/sub opt/ up to the millimetre-wave range. It is also shown, by analysis and measurements, that a complete description of HPTs can be made using a three-port network representation, with the optical window as an input port. This approach has several advantages in particular, the extraction of the 'optical' transducer power gain G/sub OT/ of the HPTs, needed for designing optoelectronic integrated circuits, OEIC.
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