{"title":"用于高速集成电路的改进BESOI衬底","authors":"A. Plettner, K. Haberger, K. Neumeier","doi":"10.1109/SOI.1995.526465","DOIUrl":null,"url":null,"abstract":"A technology is presented, which is closely related to the BESOI fabrication process. A highly conductive layer buried beneath the insulating oxide layer is advantageous for the propagation of high frequency signals on interconnects.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Improved BESOI substrates for high speed ICs\",\"authors\":\"A. Plettner, K. Haberger, K. Neumeier\",\"doi\":\"10.1109/SOI.1995.526465\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A technology is presented, which is closely related to the BESOI fabrication process. A highly conductive layer buried beneath the insulating oxide layer is advantageous for the propagation of high frequency signals on interconnects.\",\"PeriodicalId\":149490,\"journal\":{\"name\":\"1995 IEEE International SOI Conference Proceedings\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1995.526465\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526465","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A technology is presented, which is closely related to the BESOI fabrication process. A highly conductive layer buried beneath the insulating oxide layer is advantageous for the propagation of high frequency signals on interconnects.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
