R. Driad, W. Mckinnon, S. Mcalister, A. Renaud, T. Garanzotis, A. Springthorpe
{"title":"具有新型复合发射极设计的InAlAs/InP/InGaAs/InP dhbt","authors":"R. Driad, W. Mckinnon, S. Mcalister, A. Renaud, T. Garanzotis, A. Springthorpe","doi":"10.1109/ICIPRM.1999.773726","DOIUrl":null,"url":null,"abstract":"We report the design and performance of InAlAs/InP/InGaAs/InP double heterostructure bipolar transistors (DHBTs) with a composite-emitter (CE) design. The CE-DHBT structure combines various advantages of conventional InAlAs/InGaAs and InGaAs/InP HBTs. It allows passivation of the extrinsic base with a selective etch, and also allows the possibility of enhancing performance through nonequilibrium transport in the base. The CE-DHBT structure demonstrated an offset voltage (/spl Delta/V/sub CE0/) of 0.25 V with a saturation voltage (V/sub SAT/) of 0.6 V and a dc current gain of 25 for a base doping level of 7/spl times/10/sup 19/ cm/sup -3/.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InAlAs/InP/InGaAs/InP DHBTs with a novel composite-emitter design\",\"authors\":\"R. Driad, W. Mckinnon, S. Mcalister, A. Renaud, T. Garanzotis, A. Springthorpe\",\"doi\":\"10.1109/ICIPRM.1999.773726\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the design and performance of InAlAs/InP/InGaAs/InP double heterostructure bipolar transistors (DHBTs) with a composite-emitter (CE) design. The CE-DHBT structure combines various advantages of conventional InAlAs/InGaAs and InGaAs/InP HBTs. It allows passivation of the extrinsic base with a selective etch, and also allows the possibility of enhancing performance through nonequilibrium transport in the base. The CE-DHBT structure demonstrated an offset voltage (/spl Delta/V/sub CE0/) of 0.25 V with a saturation voltage (V/sub SAT/) of 0.6 V and a dc current gain of 25 for a base doping level of 7/spl times/10/sup 19/ cm/sup -3/.\",\"PeriodicalId\":213868,\"journal\":{\"name\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1999.773726\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773726","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InAlAs/InP/InGaAs/InP DHBTs with a novel composite-emitter design
We report the design and performance of InAlAs/InP/InGaAs/InP double heterostructure bipolar transistors (DHBTs) with a composite-emitter (CE) design. The CE-DHBT structure combines various advantages of conventional InAlAs/InGaAs and InGaAs/InP HBTs. It allows passivation of the extrinsic base with a selective etch, and also allows the possibility of enhancing performance through nonequilibrium transport in the base. The CE-DHBT structure demonstrated an offset voltage (/spl Delta/V/sub CE0/) of 0.25 V with a saturation voltage (V/sub SAT/) of 0.6 V and a dc current gain of 25 for a base doping level of 7/spl times/10/sup 19/ cm/sup -3/.
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