部分耗尽SOI MOSFET模拟中实验观察到的瞬态

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526433

A. Wei, M. Sherony, D. Antoniadis

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引用次数: 2

摘要

本文表明，一组独特的载流子寿命和冲击电离率可以用来解释部分耗尽SOI MOSFET的瞬态行为和直流I-V特性。这些器件在低至中等漏极电压(1.0至2.0 V)下的运行与冲击电离率和载流子寿命密切相关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Accounting for experimentally observed transients in simulation of partially-depleted SOI MOSFET's

This paper has shown that a unique set of carrier lifetime and impact ionization rate can be used to account for both the transient behavior and DC I-V characteristics of a partially-depleted SOI MOSFET. Operation of these devices at low to moderate drain voltages ( 1.0 to 2.0 V) was shown to be strongly related to both impact ionization rate and carrier lifetime.

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1995 IEEE International SOI Conference Proceedings

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