三维异构集成中纳米尺度TSV互连的故障隔离方法

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI:10.31399/asm.cp.istfa2021p0446

K. Jacobs, A. Jourdain, I. De Wolf, E. Beyne

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摘要

我们报告了基于光学和电子束的故障隔离方法，用于通过硅通孔(TSV)互连(180×250 nm, 500 nm高度)在纳米尺度上的短缺陷和开放缺陷。利用光子发射显微镜(PEM)和光束感应电流(OBIC)技术对短缺陷进行定位，利用扫描电子显微镜(SEM)的有源电压对比成像技术对开放缺陷进行隔离。我们通过透射电子显微镜(TEM)的横截面证实了我们的结果。

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Fault Isolation Approaches for Nanoscale TSV Interconnects in 3D Heterogenous Integration

We report optical and electron beam-based fault isolation approaches for short and open defects in nanometer scale through silicon via (TSV) interconnects (180×250 nm, 500 nm height). Short defects are localized by photon emission microscopy (PEM) and optical beam-induced current (OBIC) techniques, and open defects are isolated by active voltage contrast imaging in the scanning electron microscope (SEM). We confirm our results by transmission electron microscopy (TEM) based cross sectioning.

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ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis

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