D. L. Hansen, A. Le, Kay Chesnut, E. Miller, S. Pong, Sichul Sung, J. Truong
{"title":"SiGe双极和BiCMOS电路的SEU测试","authors":"D. L. Hansen, A. Le, Kay Chesnut, E. Miller, S. Pong, Sichul Sung, J. Truong","doi":"10.1109/REDW.2010.5619701","DOIUrl":null,"url":null,"abstract":"Bipolar and BiCMOS divider circuits were tested using heavy ions to determine their sensitivity to single-event effects (SEE) in terms of differences in cross-section and upset duration. No single-event latchups (SEL) were observed under any conditions. A triple-mode-redundant (TMR) design was found to be effective in reducing the SEE cross section and preventing phase-shift upsets which were the dominant upset type in the non-hardened design.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"SEU Testing of SiGe Bipolar and BiCMOS Circuits\",\"authors\":\"D. L. Hansen, A. Le, Kay Chesnut, E. Miller, S. Pong, Sichul Sung, J. Truong\",\"doi\":\"10.1109/REDW.2010.5619701\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Bipolar and BiCMOS divider circuits were tested using heavy ions to determine their sensitivity to single-event effects (SEE) in terms of differences in cross-section and upset duration. No single-event latchups (SEL) were observed under any conditions. A triple-mode-redundant (TMR) design was found to be effective in reducing the SEE cross section and preventing phase-shift upsets which were the dominant upset type in the non-hardened design.\",\"PeriodicalId\":278033,\"journal\":{\"name\":\"2010 IEEE Radiation Effects Data Workshop\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Radiation Effects Data Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW.2010.5619701\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radiation Effects Data Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.2010.5619701","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bipolar and BiCMOS divider circuits were tested using heavy ions to determine their sensitivity to single-event effects (SEE) in terms of differences in cross-section and upset duration. No single-event latchups (SEL) were observed under any conditions. A triple-mode-redundant (TMR) design was found to be effective in reducing the SEE cross section and preventing phase-shift upsets which were the dominant upset type in the non-hardened design.
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