220dB FOM, 1.9GHz振荡器,采用相位降噪技术用于高q振荡器

K. Sankaragomathi, L. Callaghan, R. Ruby, B. Otis
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引用次数: 16

摘要

提出了一种降低高q (FBAR/MEMS/晶体)振荡器近相噪声的方法。提出的技术抑制1/f噪声的上转换通过AM-PM转换通过增加一个非线性电容器的坦克。所提出的AM-PM抑制技术没有额外的功率损失,并且产生最小的面积损失。对1.9GHZ FBAR振荡器多个模组的测量表明,采用该技术,近相噪声降低≥3.5dB。FBAR振荡器实现测量相位噪声为-88dBc/Hz @ 1kHz, -116dBc/Hz @ 10kHz, -146dBc/Hz @ 1MHz偏置。采用该技术的振荡器达到了220dB的优值图(FOM),比迄今为止报道的具有最低近相噪声的FBAR振荡器高5.5dB[1]。
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A 220dB FOM, 1.9GHz oscillator using a phase noise reduction technique for high-Q oscillators
We present a technique to reduce the close-in phase noise of high-Q (FBAR/MEMS/crystal) oscillators. The proposed technique suppresses the up-conversion of 1/f noise via AM-PM conversion by the addition of a non-linear capacitor to the tank. The proposed AM-PM suppression technique has no additional power penalty and incurs a minimal area penalty. Measurements from multiple dies of a 1.9GHZ FBAR oscillator show ≥3.5dB reduction in close-in phase noise using the proposed technique. The FBAR oscillator achieves a measured phase noise of -88dBc/Hz @ 1kHz, -116dBc/Hz @ 10kHz, -146dBc/Hz @ 1MHz offsets. The oscillator with the proposed technique achieves a Figure of Merit (FOM) of 220dB, which is 5.5dB better than the FBAR oscillator with lowest close-in phase noise reported to date [1].
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