{"title":"重复短路应力对p-GaN HEMT动力学的影响","authors":"J. Kozarik, J. Marek, A. Chvála, M. Minárik","doi":"10.1109/ASDAM55965.2022.9966798","DOIUrl":null,"url":null,"abstract":"The paper presents part of results of double-pulse switching tests and extraction of dynamic on-resistance of packaged normally-off GaN HEMTs. Devices were tested under various switching conditions. Effects of the switching parameters on dynamic on-resistance were analysed and compared. Samples were exposed to repetitive SC stress for several thousand repetitions of switching. Shift of on-resistance due to short-circuit stress was observed, but not of significant magnitude.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Repetitive Short-Circuit Stress on dynRdson of p-GaN HEMT\",\"authors\":\"J. Kozarik, J. Marek, A. Chvála, M. Minárik\",\"doi\":\"10.1109/ASDAM55965.2022.9966798\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents part of results of double-pulse switching tests and extraction of dynamic on-resistance of packaged normally-off GaN HEMTs. Devices were tested under various switching conditions. Effects of the switching parameters on dynamic on-resistance were analysed and compared. Samples were exposed to repetitive SC stress for several thousand repetitions of switching. Shift of on-resistance due to short-circuit stress was observed, but not of significant magnitude.\",\"PeriodicalId\":148302,\"journal\":{\"name\":\"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM55965.2022.9966798\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM55965.2022.9966798","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of Repetitive Short-Circuit Stress on dynRdson of p-GaN HEMT
The paper presents part of results of double-pulse switching tests and extraction of dynamic on-resistance of packaged normally-off GaN HEMTs. Devices were tested under various switching conditions. Effects of the switching parameters on dynamic on-resistance were analysed and compared. Samples were exposed to repetitive SC stress for several thousand repetitions of switching. Shift of on-resistance due to short-circuit stress was observed, but not of significant magnitude.
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