应变锗纳米线mosfet

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874704

K. Ikeda, Y. Kamimuta, Y. Moriyama, M. Ono, M. Oda, T. Irisawa, T. Tezuka

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摘要

采用二步Ge凝聚技术，得到了单轴压缩应变高达3.9%的Ge纳米线mosfet。在Lg为45nm的器件中，实现了创纪录的高空穴迁移率(μeff = 1922 cm[su2}/Vs)和创纪录的低关断电流(2.7×10-9A/μm at Vd = -0.5 V)。这些结果表明，应变锗通道有潜力作为未来规模CMOS的pet通道。

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Strained germanium nanowire MOSFETs

Ge nanowire MOSFETs with a uniaxial compressive strain as high as 3.9% were demonstrated by 2-step Ge-condensation technique. Record high hole mobility (μ_eff = 1922 cm[su2}/Vs) and record-low off-current (2.7×10^-9A/μm at V_d = -0.5 V) were achieved among scaled (sub-100nm L_g) Ge MOSFET for the device with the L_g of 45nm. These results indicate that strained-Ge channels have a potential to serve as pFET channel of scaled future CMOS.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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