基于2晶体管和4晶体管结构的体电阻和SOI线性电阻非线性的比较研究

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526462

B. Gentinne, V. Dessard, S. Louveaux, D. Flandre, J. Colinge

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引用次数: 6

摘要

基于精确电流模型的测量和仿真都证明，使用SOI 4晶体管平衡结构作为无源三极管电阻用于连续时间MOSFET-C滤波器或积分器可以提供高达20 dB的线性度改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A comparative study of non-linearities in bulk and SOI linear resistors based on 2- and 4-transistor structures

Both measurements and simulations based on accurate current models prove that the use of a SOI 4-transistor balanced structure as a passive triode resistor for continuous time MOSFET-C filters or integrators can give a linearity improvement of up to 20 dB over bulk counterparts.

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1995 IEEE International SOI Conference Proceedings

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