薄型和超薄型金属屏障残基定位失效分析方法

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898198

A. Quah, N. Dayanand, S. Neo, G. Ang, M. Gunaw Ardana, H. H. Ma, Z. H. Mai, J. Lam

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引用次数: 4

摘要

本文介绍了几个案例研究，这些研究结合了激光诱导技术、光子发射显微镜和布局分析，以及与CMP未抛光相关的常见失效特征的识别，用于有效定位线Cu金属化堆后端薄和超薄Ta势垒残留物。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Failure analysis methodology for the localization of thin and ultra-thin metal barrier residue

This paper describes several case studies which used a combination of laser induced techniques, photon emission microscopy and layout analysis, together with the identification of common failure signatures that are associated with CMP under-polish, for the effective localization of thin and ultra-thin Ta barrier residue in the backend of line Cu metallization stack.

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Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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