无约束烧结低温共烧陶瓷收缩率控制

Camilla Kärnfelt, Maina Sinou
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引用次数: 1

摘要

低温共烧陶瓷(LTCC)在烧结过程中的收缩率是LTCC制造中最难控制的特征之一,因为许多因素会影响其结果。胶带制造商给出的收缩率不能完全适用于准备、使用和设备不完全一致的生产环境。因此,为了根据规格制造LTCC器件,可预测的收缩模型是非常重要的。这项工作的目的是利用强大的实验设计(DOE)技术为Ferro L8磁带开发这样的模型。四个因素各不相同;叠层厚度,器件表面,层压过程中的施加压力和温度。在这些实验中,其他因素如操作人员、层压时间或烧成剖面保持在固定值。结果变量为层压质量和x、y、z方向收缩率。叠层质量主要受叠层厚度和叠层表面积的相互作用影响,而对于z向收缩,叠层厚度、表面积和温度是主要影响因素,最后对于横向收缩,叠层厚度、表面积和温度是主要影响因素。建立了纵向和横向收缩的数值模型。这项工作加强了对LTCC收缩的理解,并允许Ferro L8用户正确地补偿收缩的布局。
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Control of Low Temperature Co-fired Ceramic Shrinkage for Unconstrained Sintering
The shrinkage of Low Temperature Co-fired Ceramics (LTCC) during firing is one of the most difficult features to control in LTCC fabrication, as many factors may impact on the result. The shrinkage given by the tape manufacturer is not perfectly transposable to a production environment where preparation, use and equipment is not in exact accordance. Thus, predictable shrinkage models are of main importance in order to fabricate LTCC devices according to specifications. The objective of this work is to develop such models for the Ferro L8 tape using the powerful Design of Experiments (DOE) technique. Four factors are varied; the stack thickness, the device surface, the applied pressure and the temperature during lamination. Other factors such as operator, lamination time or firing profile are kept to a fixed value during these experiments. The result variables are lamination quality and x, y and z-direction shrinkage. Lamination quality is found to be mainly impacted by the interaction between the stack thickness and the surface area of the stack, while for the z-direction shrinkage this interaction together with lamination temperature are significant factors and finally for the lateral shrinkage the main effects stack thickness, surface area and temperature are significant. Numerical models for shrinkage in z- and lateral directions are established. This work enforces the understanding of the shrinkage of LTCC and permits for the Ferro L8 users correctly compensate the layout for shrinkage.
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