填钨硅通孔的研究进展与挑战

2010 IEEE International Conference on Integrated Circuit Design and Technology Pub Date : 2010-06-02 DOI:10.1109/ICICDT.2010.5510274

D. Triyoso, T. Dao, T. Kropewnicki, F. Martínez, R. Noble, M. Hamilton

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引用次数: 9

摘要

通过硅通孔(TSV)已用于后端封装和最近的前端有源器件集成。在这项工作中，我们报告了通过清洗，通过填充和晶圆弯曲/应力监测的最新进展和挑战。此外，还指出了制备技术对准确表征钨填充TSV轮廓的重要性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Progress and challenges of tungsten-filled through-silicon via

Through Silicon Via (TSV) has been used for back-end packaging and more recently, for front end active device integration. In this work we report recent progress and challenges for via cleaning, via filling and wafer bow / stress monitoring. Furthermore, the importance of preparation technique for accurate characterization of tungsten-filled TSV profile will be presented.

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2010 IEEE International Conference on Integrated Circuit Design and Technology

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