25.8在0.13μm CMOS中采用ISF操作技术,在10khz至2mhz偏置频率下,FOM为190dBc/Hz的2.4GHz压控振荡器

A. Mostajeran, M. S. Bakhtiar, E. Afshari
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引用次数: 35

摘要

在过去的几十年中,vco的相位噪声(PN)改善一直是一个有趣的问题,并且仍然是收发器设计中的挑战之一。CMOS压控振荡器中的PN,尤其是近端PN,受到闪烁噪声的影响较大。闪烁噪声甚至可以在更高的偏移频率(~1MHz)下降低PN。近端PN在许多通信应用中有着重要的作用。例如,IEEE 802.11a/b/g要求在10kHz偏移频率下具有非常低的PN[1],而在蜂窝和Wi-Fi MIMO应用中,100kHz时的PN性能至关重要。除了PN性能外,功耗更低、面积更小的振荡器总是供不应求。
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25.8 A 2.4GHz VCO with FOM of 190dBc/Hz at 10kHz-to-2MHz offset frequencies in 0.13μm CMOS using an ISF manipulation technique
For the last few decades, phase-noise (PN) improvement of VCOs has been an intriguing problem and remains as one of the challenges in transceiver design. PN in CMOS VCOs, especially close-in PN, greatly suffers from flicker noise. The flicker noise can even degrade the PN at higher offset frequencies (~1MHz). The close-in PN is important in many communication applications. For instance, IEEE 802.11a/b/g requires a very low PN at 10kHz offset frequency [1] and the PN performance at 100kHz is critical in cellular and Wi-Fi MIMO applications. In addition to the PN performance, oscillators with lower power consumption and smaller area are always on demand.
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